Approaches to Surface Electronics with Hydrogen Terminated Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-07-11 |
| Journal | ECS Meeting Abstracts |
| Authors | Alastair Stacey |
Abstract
Section titled āAbstractāDiamond is a leading material candidate for high power, high frequency and extreme environment electronics. However, its ultrawide bandgap and deep electronic dopants present significant challenges to development of devices which fulfil its potential. Here I will present our efforts to develop the diamond surface for the creation of high performance surface electronic devices. In particular, I will focus on our efforts, in partnership with device specialists, to develop material synthesis, surface processing and surface science characterisation methodologies, focused on the creation of optimized surface transfer doped transistors. I will first present our investigation of wet, plasma and dry experimental approaches to hydrogenation of the diamond surface. This will be complemented by our studies to characterize the surface state, especially focused on surface defect sites and the state of the surface prior to transfer doping. This will be complemented by studies of the state of oxygen contaminants on the surface and our efforts to control the surface planarity during hydrogenation procedures. Finally, I will describe the impact of these studies in terms of different surface-fashioned transistor trials and outline our approach to the development of extreme environment diamond electronics in the future.