High-mobility, low-resistive boron-doped diamond material realized by oxygen assistance
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-09-12 |
| Journal | Chinese Physics B |
| Authors | Gengyou Zhao, Kun Tang, Kai Yang, Bo Feng, Liangxue Gu |
Abstract
Section titled āAbstractāAbstract The effect of trace oxygen on the light-doping behavior of boron in diamond films during microwave plasma chemical vapor deposition was experimentally investigated. Boron-doped diamond films were grown continuously under different oxygen concentrations (O/C=0~5%). When oxygen was added during the diamond doping process, improvements in crystal quality and surface morphology were observed, and residual nitrogen was significantly suppressed. However, further increasing oxygen concentrations could lead to surface defects. We evaluated and discussed the carrier mobility, carrier concentration, and boron content of the samples. At room temperature, under the condition of O/C=4%, the maximum hole mobility reached 1400 cm 2 /VĀ·s, and a higher carrier concentration of 1.5Ć10 15 cm -3 was obtained which is a very excellent result among all previous studies. In addition, the characteristic peaks that appeared in both low-temperature PL spectra and absorption spectra were analyzed, and it was explained that the characteristic peak at 4.7 eV (270 nm) may correspond to a boron-nitrogen complex, supplementing the effect of boron-doped diamond on defect formation. These findings demonstrated the potential of controlling the boron concentration in diamond films using oxygen concentration in a plasma environment and open avenues for future applications in advanced optoelectronic devices.