Heterogenous Integration of Boron-Doped p -Diamond with Monolayer n -MoS 2 for P N Junctions Operating at Room Temperature
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-10-03 |
| Journal | Nano Letters |
| Authors | Akshay Wali, Roshan Padhan, Ralu Divan, Liliana Stan, Nihar Pradhan |
| Institutions | Jackson State University, Argonne National Laboratory |
Abstract
Section titled āAbstractāDiamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature <i>n</i>-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating <i>n</i>-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS<sub>2</sub>) with boron doped <i>p</i>-type single crystal diamond and demonstrate 2D/3D heterostructure-based <i>PN</i> junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (<i>J</i><sub>D</sub>) of ā¼4000 A/cm<sup>2</sup>, an ideality factor (Ī·) value of ā¼3.7, and a rectification ratio (RR) of 10<sup>6</sup>. We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. Our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2013 - Diamond: Electronic Properties and Applications
- 2009 - CVD Diamond for Electronic Devices and Sensors [Crossref]