A New Test Environment Approach to SEE Detection in MOSFETs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | Advanced materials research |
| Authors | L. E. Seixas, M. Guazzelli, N. H. Medina, Vitor A. P. Aguiar, N. Added |
| Institutions | Center for Information Technology, Universidade Castelo Branco |
| Citations | 7 |
Abstract
Section titled āAbstractāThis paper shows a comparison between two different MOSFET structures: a conventional layout (CM) and Diamond (DM - enclosed layout transistor), as tolerance to the Single Event effect - SEE. Both CMOS 0.35Ī¼m technology devices types have the same geometric factor (W/L) and during irradiation were monitored continuously to detect and acquire the SEEs applying a new approach with a PXI test system. For this work was used heavy ion beams produced at the SaĢo Paulo 8 UD Pelletron accelerator.