Diamond nanowires with nitrogen vacancy under a transverse electric field
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-01-13 |
| Journal | Physical Review B |
| Authors | Jihua Zhang, Juexian Cao, Xiaohong Chen, Jianwen Ding, Peihong Zhang |
| Institutions | Guizhou Normal University, Shanghai University |
| Citations | 14 |
Abstract
Section titled āAbstractāWe have investigated the electronic, magnetic, and optical properties of hydrogenated diamond nanowires (DNWs) with nitrogen-vacancy (NV) centers using density functional theory. The strong localization of defect states results in the formation of local magnetic moments with a spin-polarization energy that is close to those for transition-metal atoms. Such spin-polarized defect states are found to be stable well above room temperature, in agreement with previous experimental reports. In addition, we find that a semiconductor-metal transition can be triggered upon applying a transverse electric field. Furthermore, an enhanced optical absorption in the visible-light region is predicted in DNWs with NV centers. The strength and the position of the absorption can be tuned or optimized by an external electric field and/or the nanowire diameter.