Towards parallel fabrication of single electron transistors using carbon nanotubes
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | Nanoscale |
| Authors | Muhammad Rakibul Islam, Daeha Joung, Saiful I. Khondaker |
| Institutions | University of Central Florida |
| Citations | 12 |
Abstract
Section titled āAbstractāSingle electron transistors (SETs) are considered to be promising building blocks for post CMOS era electronic devices, however, a major bottleneck for practical realization of SET based devices is a lack of a parallel fabrication approach. Here, we have demonstrated a technique for the scalable fabrication of SETs using single-walled carbon nanotubes (SWNTs). The approach is based on the integration of solution processed individual SWNTs via dielectrophoresis (DEP) at the selected position of the circuit with a 100 nm channel length, where the metal-SWNT Schottky contact works as a tunnel barrier. Measurements carried out at a low temperature (4.2 K) show that the majority of the devices with a contact resistance (RT) > 100 kĪ© display SET behavior. For the devices with 100 kĪ© < RT < 1 MĪ©, periodic, well-defined Coulomb diamonds with a charging energy of ā¼14 meV, corresponding to the transport through a single quantum dot (QD) was observed. For devices with high RT (>1 MĪ©) multiple QD behavior was observed. From the transport study of 50 SWNT devices, a total of 38 devices show SET behavior giving a yield of 76%. The results presented here are a significant step forward for the practical realization of SET based devices.