Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-02-01 |
| Authors | Sergio GarcĂa-SĂĄnchez, I. Ăñiguez-de-la-Torre, Ă. GarcĂa-PĂ©rez, J. Mateos, T. GonzĂĄlez |
| Institutions | Universidad de Salamanca |
Abstract
Section titled âAbstractâIn this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamond - PCD, diamond, silicon and sapphire), and die dimensions will be analysed. When a temperatureindependent thermal conductivity is considered, the obtained values of Rth depend on the geometry and substrate material, and are constant with the dissipated power (Pdiss). When a temperaturedependent thermal conductivity is needed to correctly reproduce the thermal behaviour of the device, Rth exhibits a strong dependence on Pdiss.