Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-02-23 |
| Journal | Applied Physics Letters |
| Authors | Meiyong Liao, Jiangwei Liu, Liwen Sang, David Coathup, Jiangling Li |
| Institutions | National Institute for Materials Science, Aston University |
| Citations | 19 |
Abstract
Section titled āAbstractāImpedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.