Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-02-23 |
| Journal | physica status solidi (a) |
| Authors | MƔire Power, James W. Pomeroy, Yohei Otoki, Takeshi Tanaka, Jiro Wada |
| Institutions | University of Bristol, Hitachi (Japan) |
| Citations | 16 |
Abstract
Section titled āAbstractāThe thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro-thermometers and standard micro-Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon-doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 Ā± 20 Wmā1 Kā1 was obtained for a carbon-doped GaN layer with a doping concentration of 1017 cmā3.