Recent progress in wafer-fused VECSELs emitting in the 1310nm waveband
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-03-04 |
| Journal | Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE |
| Authors | A. Sirbu, Antti RantamÀki, V. Iakovlev, A. Mereuta, A. Caliman |
| Institutions | Tampere University, Ăcole Polytechnique FĂ©dĂ©rale de Lausanne |
Abstract
Section titled âAbstractâOver the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.