Electrical excitation of silicon-vacancy centers in single crystal diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-04-27 |
| Journal | Applied Physics Letters |
| Authors | Amanuel M. Berhane, Sumin Choi, Hiromitsu Kato, Toshiharu Makino, Norikazu Mizuochi |
| Institutions | University of Technology Sydney, National Institute of Advanced Industrial Science and Technology |
| Citations | 37 |
Abstract
Section titled āAbstractāElectrically driven emission from negatively charged silicon-vacancy (SiV)ā centers in single crystal diamond is demonstrated. The SiV centers were generated using ion implantation into an i region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)ā centers. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)ā emission is promising for scalable nanophotonics devices employing color centers in single crystal diamond.