Current enhancement by conductivity modulation in diamond JFETs for next generation low-loss power devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-05-01 |
| Authors | Takayuki Iwasaki, Hiromitsu Kato, Junya Yaita, Toshiharu Makino, Masahiko Ogura |
| Institutions | Tokyo Institute of Technology, National Institute of Advanced Industrial Science and Technology |
| Citations | 4 |
Abstract
Section titled āAbstractāDiamond junction field-effect transistors (JFETs) were operated in bipolar-mode to enhance the drain current. In unipolar-mode, the drain current in diamond JFET is limited by low activation of boron acceptors in the p-type channel. To increase the drain current, minority carriers were injected from the n <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>+</sup> -diamond gates to p-channel, resulting in conductivity modulation. The drain current increased by a factor of up to 8.5 with current gains of 100-2600. We confirmed that the bipolarmode operation can be performed at a high temperature of 200 <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>o</sup> C. The combination of the bipolar-mode and high temperature operation will lead to the realization of low-loss diamond power devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1983 - high temperature characteristics of bipolar mode power jfet operation [Crossref]