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4 A/cm<sup>2</sup>, 7kV normally-off diamond-emitter vacuum switch

MetadataDetails
Publication Date2015-05-01
AuthorsDaisuke Takeuchi, Hiroyuki Kawashima, Daisuke Kuwabara, Toshiharu Makino, Hiromitsu Kato
InstitutionsNational Institute for Materials Science, National Institute of Advanced Industrial Science and Technology
Citations2

We have been proposed ultra-high voltage vacuum switches using diamond pin diode-type electron emitters with a negative electron affinity. Based on the previous 10 kV demonstration, our recent progress on high current operations above 1 A/cm <sup xmlns:mml=ā€œhttp://www.w3.org/1998/Math/MathMLā€ xmlns:xlink=ā€œhttp://www.w3.org/1999/xlinkā€&gt;2&lt;/sup> in the vacuum switch is presented. High voltage of 7kV normally-off operation was confirmed, and then we evaluated the capability of this device based on our model.

  1. 2009 - High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers [Crossref]
  2. 2008 - Low specific contact resitance of heavily phosphorus-doped diamond film [Crossref]
  3. 2012 - A 10kV vacuum switch with negative electron affinity of diamond p-i-n electron emitter