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6CCVD Research

Finite element analysis of AlGaN/GaN micro-diaphragms with diamond coating

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2015-05-21
JournalProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
AuthorsJ. Dzuba, G. Vanko, MariĆ”n Vojs, I. RĆ½ger, Tibor IÅ¾Ć”k
InstitutionsCzech Academy of Sciences, Institute of Physics, Slovak University of Technology in Bratislava
Citations4

Abstract

Section titled ā€œAbstractā€

In this work, we present a pressure sensor based on diamond coated AlGaN/GaN diaphragm with integrated high electron mobility transistor (HEMT). The influence of the diamond film thickness (in the range of 1 Ī¼m to 50 Ī¼m) on the properties of the AlGaN/GaN diaphragm is studied by finite element simulation method (FEM). The effect of thermal buckling as well as the induced piezoelectric charge of HEMTs as a function of pressure and temperature is investigated. It was found out that diamond coated sensor better prevents the effect known as thermal buckling of the diaphragm at elevated temperature. Thermal buckling of diaphragms with 1, 5, 10 Ī¼m diamond coating occurs at temperature 40, 73 and 142 Ā°C, respectively. Compared with original GaN diaphragm, diamond expanded the operational temperature range of the pressure sensor. Moreover, compared with the operational range of pressure sensor based on pure GaN diaphragm (up to 30 kPa), diamond coated modified MEMS sensors withstand relatively higher pressures (2.2 MPa). The maximum load on the diaphragm increased two times by adding only 1 Ī¼m of diamond coating.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2003 - Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors
  2. 2004 - Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes
  3. 2015 - Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor

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