Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-05-13 |
| Journal | physica status solidi (a) |
| Authors | A. P. Bolshakov, Victor Ralchenko, Vadim Sedov, Š.Š. Khomich, Š. Š. ŠŠ»Š°ŃŠ¾Š² |
| Institutions | P.N. Lebedev Physical Institute of the Russian Academy of Sciences, National Research Nuclear University MEPhI |
| Citations | 78 |
Abstract
Section titled āAbstractāHomoepitaxial single crystal diamond layers with bright photoluminescence (PL) of siliconāvacancy (SiV) color centers at 738 nm wavelength have been grown on (100) diamond substrates by a microwave plasma CVD using a controlled Si doping via adding silane to CH 4 ļ£æH 2 reaction gas mixture in the course of the deposition process. In the range of the silane concentrations SiH 4 /CH 4 explored, from 0 to 2.4%, the SiV PL intensity shows a nonmonotonic behavior with silane addition, with a maximum at 0.6%SiH 4 /CH 4 , and a rapid PL quenching at higher Si doping. The maximum SiV concentration of ā450 ppb in the samples has been determined from optical absorption spectra. It is found that the SiV PL intensity can strongly, an order of magnitude, increase within nonāepitaxial inclusions in single crystal diamond film.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - Quantum Information Processing With Diamond: Principles and Applications