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Diamond crystals deposited from interacting jets

MetadataDetails
Publication Date2015-05-13
JournalPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
AuthorsА. К. Ребров, A. A. Emel’yanov, S. S. Kosolobov, I. B. Yudin
InstitutionsInstitute of Semiconductor Physics, Institute of Thermophysics
Citations7

Abstract This paper describes the advancement of hot wire or hot filament CVD methods of diamond synthesis through the use high velocity gas flow activation by multiple collisions with a lengthy hot surface instead of activation by single collisions with hot wires. The possibility of synthesis of diamond crystals from a neutral gas with a high growth rate and a future solution of engineering scaling problems promise that this method will become competitive with others. Interacting jets of hydrogen and mixture of hydrogen with methane were used to synthesize diamond crystals on a molybdenum substrate. The growth rate of crystals about 20 μm/h was attained, which is much higher than in the case of a hot filament CVD. The increase of CH 4 concentration essentially increases the diamond crystal growth rate. Depending on local conditions of the interaction of jets with substrates in different points, a completely different morphology of deposit is observed: from a compact film to isolated coarse crystals mostly icosahedral form. (Ā© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)