Improved thermal management of InP transistors in transferred‐substrate technology with diamond heat‐spreading layer
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-06-01 |
| Journal | Electronics Letters |
| Authors | Ksenia Nosaeva, Nils Weimann, Matthias Rudolph, W. John, Olaf Krueger |
| Institutions | Kirchhoff (Germany), Ferdinand-Braun-Institut |
| Citations | 28 |
Abstract
Section titled “Abstract”A method to improve the thermal management of indium phosphide (InP) double‐hetero bipolar transistors (DHBTs) fabricated in a transferred‐substrate technology is presented. A vapour‐phase deposited diamond layer acting as a heat spreader is heterogeneously integrated into the vertical layer stack. It is observed that the diamond layer reduces the thermal resistance of a 0.8 × 5 µm 2 single emitter-finger HBT by roughly 75% down to 1.1 K/mW which is, to the authors’ knowledge, the best value reported thus far for InP HBTs of comparable size. It is also the first demonstration of heterogeneous integration of diamond into an InP HBT monolithic microwave integrated circuit.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2013 - Development of a via etch process through diamond and BCB for an advanced transferred‐substrate InP HBT process
- 2000 - A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors