Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-06-01 |
| Journal | Applied Physics Letters |
| Authors | J. Anaya, Stefano Rossi, M. Alomari, E. Kohn, Lajos TĂłth |
| Institutions | University of Bristol, Universität Ulm |
| Citations | 53 |
Abstract
Section titled âAbstractâThe thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.