Influence of Diamond CVD Growth Conditions and Interlayer Material on Diamond/GaN Interface
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-06-30 |
| Journal | Materials science forum |
| Authors | Tibor Ižák, Oleg Babchenko, Vı́t Jirásek, G. Vanko, Marián Vojs |
| Institutions | Slovak University of Technology in Bratislava, Czech Academy of Sciences |
| Citations | 8 |
Abstract
Section titled “Abstract”In this study we present the diamond deposition on AlGaN/GaN substrates focusing on the quality of the diamond/GaN interface. The growth of diamond films was performed using microwave chemical vapour deposition system in different gas mixtures: standard CH 4 /H 2 (at low and high ratio of CH 4 to H 2 ) and addition of CO 2 to CH 4 /H 2 gas chemistry. The diamond films were grown directly on GaN films either without or with thin interlayer. As interlayer, 100 nm thick Si 3 N 4 was used. Surprisingly, in the case of standard CH 4 /H 2 gas mixture, no diamond film was observed on the GaN with SiN interlayer, while adding of CO 2 resulted in diamond film formation of both samples with and without SiN interlayer. Moreover, adding of CO 2 led to higher growth rate. The morphology of diamond films and the quality of the diamond/GaN interface was investigated from the cross-section images by scanning electron microscopy and the chemical character (i.e. sp 3 versus sp 2 carbon bonds) was measured by Raman spectroscopy.