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6CCVD Research

Variation of Coulomb diamonds and excited states caused by electric field in Si single-electron transistor

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2015-06-14
JournalIEEE Silicon Nanoelectronics Workshop
AuthorsHikaru Satoh, Takafumi Uchida, Atsushi Tsurumakiā€Fukuchi, Masashi Arita, Akira Fujiwara
InstitutionsNTT Basic Research Laboratories, Hokkaido University

Abstract

Section titled ā€œAbstractā€

Small Si single-electron transistors (SETs) show interesting nature due to their complicated energy-level structure. We evaluate Coulomb diamonds and excited states of dual-gate SETs by changing an electric field in the SET island. Even though the number of electron in the SET island is constant, the electric field applied by the dual gates remarkably changes the electron addition energies. In addition, interesting variation of excited states due to the electric field are also observed.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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