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6CCVD Research

Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrate

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2015-06-14
AuthorsYu Yamaoka, Tetsuo Kodera, Shunri Oda
InstitutionsTokyo Institute of Technology

Abstract

Section titled ā€œAbstractā€

We fabricated double quantum dots (DQDs) and a single electron transistor (SET) as a charge sensor (CS) on highly-doped silicon-on-insulator (SOI) substrate. We observed Coulomb oscillations, and Coulomb diamonds in the SET, and estimated its charging energy to be āˆ¼15meV. We detected the change in the number of electrons of the DQDs with the CS, and observed a honeycomb-like charge stability diagram which is typical characteristics for DQDs. The regular shape of the charge stability diagram indicates that we succeeded in fabricating the DQDs without unintentional localized states.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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