Crystalline Tetrahedral Phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-09-16 |
| Journal | ECS Transactions |
| Authors | Patrick Sims, Toshihiro Aoki, J. MenƩndez, John Kouvetakis |
| Institutions | Arizona State University, Laboratoire de physique des Solides |
| Citations | 1 |
Abstract
Section titled āAbstractāCrystalline (III-V) 1-y (IV 2 ) y hybrid semiconductors Al 1-x B x PSi 3 and Al 1-x B x AsSi 3 have been grown on Si(001) substrates via reactions of Al(BH 4 ) 3 and M(SiH 3 ) 3 (M = P, As). These films are characterized for structure, composition, and phase morphology The materials form by interlinking III-V-IV 3 tetrahedral units that construct a cubic lattice with average diamond-like symmetry containing isolated III-V pairs. This synthetic approach was extended to alloy systems in which the III-V pairs are imbedded in a Ge-matrix using As(GeH 3 ) 3 . These materials are grown on Ge/Si(001) platforms and a comparative study of two growth methods is presented. One describes a low pressure CVD route via reactions of Al(BH 4 ) 3 and As(GeH 3 ) 3 , and the other is a gas-source MBE technique combining Al atoms from an effusion cell with the germyl-arsene precursor. Both sets of films are studied using aberration-corrected STEM. Globally the results show that Al(BH 4 ) 3 acts as a carbon-free source of Al compatible with CVD protocols.