Electrochemical performance of boron‐doped diamond films on tungsten rods with silicon interlayer
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-09-28 |
| Journal | physica status solidi (a) |
| Authors | Pavan Muralidhar, Fabian W. Hartl, Ludwig A. Kibler, A. Pasquarelli, Steffen Strehle |
| Institutions | Universität Ulm |
| Citations | 1 |
Abstract
Section titled “Abstract”Diamond films must be deposited liquid‐tight onto conductive substrates when focusing on electrochemical applications to avoid low performance or limited reproducibility due to leakage currents, corrosion, and film delamination. Here, we report on the growth of such liquid‐tight boron‐doped nanocrystalline diamond films onto tungsten rods via silicon interlayers, resembling electrochemical electrodes. These electrodes were thoroughly studied with respect to their electrochemical performance. Cyclic voltammetry revealed for instance a broad double‐layer region of about 2-3 V and low‐background currents. The electron transfer reactions were performed with [Ru(NH 3 ) 6 ]Cl 3 and K 4 [Fe(CN 6 )] solutions to study the effect of electrode properties on reaction kinetics.