GaN heterostructures with diamond and graphene
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-10-15 |
| Journal | Semiconductor Science and Technology |
| Authors | B. PĂ©cz, LĂĄszlĂł S. TĂłth, G. Tsiakatouras, A. Adikimenakis, AndrĂĄs KovĂĄcs |
| Institutions | Ernst Ruska Centre, Linköping University |
| Citations | 6 |
Abstract
Section titled âAbstractâThe full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.