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6CCVD Research

Progress on diamond PIN diode emitters with negative electron affinity for high-voltage d.c. vacuum switches

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2015-10-01
AuthorsDaisuke Takeuchi, Hiroyuki Kawashima, Daisuke Kuwabara, Toshiharu Makino, Hiromitsu Kato
InstitutionsNational Institute for Materials Science, National Institute of Advanced Industrial Science and Technology

Abstract

Section titled ā€œAbstractā€

We have reported on ultra-high-voltage vacuum switches using diamond pin diode-type electron emitters with negative electron affinity. Based on the previous 10-kV demonstration, we present our recent progress on high-current operations at 4 A/cm2 in these vacuum switches. We confirmed a normally-off mode at a high voltage of 7 kV; in addition, we evaluated the capability of this device based on our model.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2009 - High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers [Crossref]
  2. 2008 - Low specific contact resitance of heavily phosphorus-doped diamond film [Crossref]
  3. 2012 - A 10kV vacuum switch with negative electron affinity of diamond p-i-n electron emitter

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