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Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2015-11-30
JournalApplied Physics Letters
AuthorsJordi Llobet, Emiljana Krali, Chen Wang, Jordi Arbiol, Mervyn Jones
InstitutionsImperial College London, Institut CatalĆ  de NanociĆØncia i Nanotecnologia
Citations10

Abstract

Section titled ā€œAbstractā€

Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy āˆ¼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing āˆ¼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole-acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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