GaN-on-diamond electronic device reliability - Mechanical and thermo-mechanical integrity
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-12-21 |
| Journal | Applied Physics Letters |
| Authors | Dong Liu, Huarui Sun, James W. Pomeroy, Daniel Francis, Firooz Faili |
| Institutions | Bristol Robotics Laboratory, University of Bristol |
| Citations | 30 |
Abstract
Section titled āAbstractāThe mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2013 - A new high power GaN-on-diamond HEMT with low-temperature bonded substrate technology