Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-12-29 |
| Journal | IEEE Electron Device Letters |
| Authors | Taisuke Suwa, Takayuki Iwasaki, Kazuki Sato, Hiromitsu Kato, Toshiharu Makino |
| Institutions | Tokyo Institute of Technology, National Institute of Advanced Industrial Science and Technology |
| Citations | 41 |
Abstract
Section titled āAbstractāWe developed normally-off diamond junction field-effect transistors with narrow channel widths. The p-channel device with the narrowest channel width of 0.26 Ī¼m showed a large threshold voltage of -3 V. The obtained threshold voltage is consistent with the value estimated by considering the tapered channel width and the gradual-doping in the channel, which were measured by secondary ion mass spectrometry and cross-sectional transmission electron microscopy. We confirmed that the threshold voltage can be well controlled by the channel width.