Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-01-01 |
| Journal | Materials Today Proceedings |
| Authors | A. Y. Polyakov, Н. А. Смирнов, С. А. Тарелкин, A. V. Govorkov, В. С. Бормашов |
| Institutions | National University of Science and Technology, Technological Institute for Superhard and Novel Carbon Materials |
| Citations | 10 |
Abstract
Section titled “Abstract”Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-1014 cm-3. The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.