Imaging Current Distributions and Temperature Profiles in GaN HEMTs using Nitrogen Vacancy Centers in Nanodiamonds

At a Glance

Metadata	Details
Publication Date	2016-01-01
Journal	Conference on Lasers and Electro-Optics
Authors	Christopher Foy, Kevin R. Bagnall, Matthew E. Trusheim, Alberto Lauri, Evelyn N. Wang
Institutions	IIT@MIT

Abstract

Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text C. Foy, K. R. Bagnall, M. E. Trusheim, A. Lauri, E. N. Wang, and D. Englund, “Imaging Current Distributions and Temperature Profiles in GaN HEMTs using Nitrogen Vacancy Centers in Nanodiamonds,” in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper ATu3J.2. Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article

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Original Source

DOI: https://doi.org/10.1364/cleo_at.2016.atu3j.2