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Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states

MetadataDetails
Publication Date2016-02-22
JournalPhysical review. B./Physical review. B
AuthorsTingyu Lu, Jun Zhou, Tsuneyoshi Nakayama, Ronggui Yang, Baowen Li
InstitutionsUniversity of Colorado Boulder, Hokkaido University
Citations27

We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992)] and most recently by Hohensee et al. [Nature Commun. 6, 6578 (2015)].

  1. 1989 - Progress in Low Temperature Physics