Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-02-22 |
| Journal | Physical review. B./Physical review. B |
| Authors | Tingyu Lu, Jun Zhou, Tsuneyoshi Nakayama, Ronggui Yang, Baowen Li |
| Institutions | University of Colorado Boulder, Hokkaido University |
| Citations | 27 |
Abstract
Section titled āAbstractāWe point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992)] and most recently by Hohensee et al. [Nature Commun. 6, 6578 (2015)].
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1989 - Progress in Low Temperature Physics