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Picosecond-laser bulk modification induced enhancement of nitrogen-vacancy luminescence in diamond

MetadataDetails
Publication Date2016-02-09
JournalJournal of the Optical Society of America B
AuthorsS.M. Pimenov, А.А. Khomich, Beat Neuenschwander, Beat Jäggi, Valerio Romano
InstitutionsVavilov Institute of General Genetics, Bern University of Applied Sciences
Citations21

We report on the enhancement of nitrogen-vacancy (NV) luminescence induced by the bulk structure modification of a type IIa single-crystal diamond with a visible picosecond laser. Using online monitoring of picosecond-laser-induced photoluminescence (PL) in the bulk regions we found that the integrated intensity of the NV PL is significantly increased after the bulk microstructure formation. The confocal PL spectroscopy investigations of the bulk microstructures have evidenced the enhanced NV luminescence and the splitting of the NVāˆ’ emission. The increased concentration of the NV defects during picosecond-laser bulk modification correlates with the formation of sp3 carbon allotropic structures and other defect centers revealed in PL/Raman spectra of high-stress regions near the fabricated microstructures.