Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-03-09 |
| Journal | IEEE Electron Device Letters |
| Authors | Huarui Sun, James W. Pomeroy, Roland B. Simon, Daniel Francis, Firooz Faili |
| Institutions | University of Bristol, Element Six (United States) |
| Citations | 68 |
Abstract
Section titled āAbstractāThe thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 Ā°C to 250 Ā°C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1997 - Heat capacity, conductivity, and the thermal coefficient of expansion