On the possibility of applying n/(3C-SiC)–p/CDIAMOND white glow heterostructures with improved parameters in illumination systems with power consumption from solar radiation
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-04-01 |
| Journal | Applied Solar Energy |
| Authors | Timur Saliev, S. L. Lutpullaev, A. Kutlimuratov |
| Institutions | Academy of Sciences Republic of Uzbekistan |
Abstract
Section titled “Abstract”The voltage-current characteristics and electroluminescence of a light-emitting-diode (LED) n/(3C-SiC)-p/ CDIAMOND heterostructure with white glow without phosphor created on the basis of diamond film grown by the CVD method on n/(3C-SiC) substrates with a doped level of (5-8) × 1017 cm-3 are considered It is shown the possibility to improve the characteristics of created LED structures by their irradiation with a flux of high-energy (5 MeV) electrons of a certain dose and heat treatment.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2009 - Preprint of Institute of Nuclear Physics ASRU.
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