Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-04-01 |
| Journal | Semiconductors |
| Authors | P. A. Averichkin, A. A. Donskov, M. P. Dukhnovsky, S. N. Knyazev, Yu. P. Kozlova |
| Institutions | Institute for Nuclear Research, Giredmet (Russia) |
Abstract
Section titled āAbstractāThe results of using carbidsiliconoxide (a-C:SiO1.5) films with a thickness of 30-60 nm, produced by the pyrolysis annealing of oligomethylsilseskvioksana (CH3-SiO1.5) n with cyclolinear (staircased) molecular structure, as intermediate films in the hydride vapor phase epitaxy of gallium nitride on polycrystalline CVD-diamond substrates are presented. In the pyrolysis annealing of (CH3-SiO1.5) n films in an atmosphere of nitrogen at a temperature of 1060Ā°C, methyl radicals are carbonized to yield carbon atoms chemically bound to silicon. In turn, these atoms form a SiC monolayer on the surface of a-C:SiO1.5 films via covalent bonding with silicon. It is shown that GaN islands grow on such an intermediate layer on CVD-polydiamond substrates in the process of hydride vapor phase epitaxy in a vertical reactor from the GaCl-NH3-N2 gas mixture.