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A 330 GHz active frequency quadrupler in InP DHBT transferred-substrate technology

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2016-05-01
AuthorsMaruf Hossain, Ksenia Nosaeva, Nils Weimann, Viktor Krozer, W. Heinrich
InstitutionsFerdinand-Braun-Institut
Citations12

Abstract

Section titled ā€œAbstractā€

This paper presents a wideband 330 GHz frequency quadrupler using 0.8 Ī¼m transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer, which improves the power handling capability of the circuit. The quadrupler delivers -7 dBm output power at 325 GHz, at a DC consumption of only 40 mW, which corresponds to 0.5 % of efficiency. It achieves 90 GHz bandwidth and exhibits very low unwanted harmonics. The circuit utilizes a balanced architecture. The results demonstrate the potential of the InP TS.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2013 - A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology
  2. 0 - 255 to 330 GHz Active Frequency TripIer MMIC

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