Control of Spin Defects in Wide-Bandgap Semiconductors for Quantum Technologies
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-05-24 |
| Journal | Proceedings of the IEEE |
| Authors | F. Joseph Heremans, Christopher G. Yale, D. D. Awschalom |
| Institutions | University of Chicago, Argonne National Laboratory |
| Citations | 70 |
Abstract
Section titled āAbstractāDeep-level defects are usually considered undesirable in semiconductors as they typically interfere with the performance of present-day electronic and optoelectronic devices. However, the electronic spin states of certain atomic-scale defects have recently been shown to be promising quantum bits for quantum information processing as well as exquisite nanoscale sensors due to their local environmental sensitivity. In this review, we will discuss recent advances in quantum control protocols of several of these spin defects, the negatively charged nitrogen-vacancy (NV<sup>-</sup>) center in diamond and a variety of forms of the neutral divacancy (VV<sup>0</sup>) complex in silicon carbide (SiC). These defects exhibit a spin-triplet ground state that can be controlled through a variety of techniques, several of which allow for room temperature operation. Microwave control has enabled sophisticated decoupling schemes to extend coherence times as well as nanoscale sensing of temperature along with magnetic and electric fields. On the other hand, photonic control of these spin states has provided initial steps toward integration into quantum networks, including entanglement, quantum state teleportation, and all-optical control. Electrical and mechanical control also suggest pathways to develop quantum transducers and quantum hybrid systems. In conclusion, the versatility of the control mechanisms demonstrated should facilitate the development of quantum technologies based on these spin defects.