Heatsink diamond nanostructures for microwave semiconductor electronics
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-07-01 |
| Journal | Nanotechnologies in Russia |
| Authors | P. P. Maltsev, S. V. Redkin, I. A. Glinskiy, N. V. Poboikina, M. P. Duknovskiy |
| Institutions | Institute of Superhigh-Frequency Semiconductor Electronics of the Russian Academy of Sciences, Research Institute of Precision Instruments (Russia) |
| Citations | 4 |
Abstract
Section titled āAbstractāA basic technique for manufacturing and processing polycrystalline diamond as a promising material for heatsinks of high-power microwave semiconductor devices is proposed. The fabrication of polycrystalline diamond wafers by chemical vapor deposition is investigated. The choice of a method for fragmenting polycrystalline diamond wafers is considered and a new technique for low-pressure laser/plasma chemical cutting of wafers in a gaseous medium is proposed which consists of growing polycrystalline diamond on preshaped silicon substrates and subsequent silicon etching.