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Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2016-08-01
JournalJournal of Applied Physics
AuthorsJulian A. Steele, Pascal Puech, R. A. Lewis
InstitutionsCentre d’Élaboration de MatĂ©riaux et d’Études Structurales, UniversitĂ© Toulouse III - Paul Sabatier
Citations25

Abstract

Section titled “Abstract”

Due to their interesting orientation-dependent properties, the ability to grow high-index semiconductor crystals and nanostructures extends the design palette for applications based on these materials. Notably, a source containing a systematic reporting of what the Raman tensors are for an arbitrary high-index zincblende material is yet to appear in the literature. Herein, we present the polarized Raman backscattering selection rules for arbitrary (hhl)-oriented diamond- and zincblende-type crystal surfaces and verify their correctness through experiment (up to (115)). Considering the many degrees of freedom available to common polarized micro-Raman scattering instruments, and the unique local orientation of the probed material, we further examine a range of consequences imposed by the selection rules for the Raman backscattering method.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
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