Signal and noise of Diamond Pixel Detectors at High Radiation Fluences
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-08-17 |
| Authors | J.-W. Tsung, M. HavrĆ”nek, F. Huegging, H Kagan, H. KrĆ¼ger |
| Institutions | University of Bonn, The Ohio State University |
| Citations | 52 |
Abstract
Section titled āAbstractāABSTRACT: CVD diamond is an attractive material option for LHC vertex detectors mainly be-cause of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 1015 neq cmā2, which are ex-pected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design and performance, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path Ī»e/h of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel ca-pacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None