Silicon Allotropy and Chemistry at Extreme Conditions
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-08-01 |
| Journal | Energy Procedia |
| Authors | Oleksandr O. Kurakevych, Yann Le Godec, Wilson A. Crichton, Timothy A. Strobel |
| Institutions | Centre National de la Recherche Scientifique, Carnegie Institution for Science |
| Citations | 6 |
Abstract
Section titled āAbstractāSilicon is essential for todayās electronics because of its ability to show various electronic behaviors that are relevant to numerous fields of cutting-edge applications. It is not a pollutant and, therefore, an ideal candidate to replace the actual materials in photovoltaics, such as compounds based on the arsenic and heavy metals. However, conventional diamond-like Si is an indirect gap semiconductor and cannot absorb solar photons directly. This justifies intensive theoretical and experimental research for the direct-bandgap forms of silicon. Our recent high-pressure studies of the chemical interaction and phase transformations in the Na-Si system, revealed a number of interesting routes to new and known silicon compounds and allotropes. The pressure-temperature range of their formation is suitable for large-volume synthesis and future industrial scaling. The variety of properties observed (e.g. quasi-direct bandgap of open-framework allotrope Si24) allows us to suggest future applications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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