A diamond-based photovoltaic cell
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-09-01 |
| Journal | Instruments and Experimental Techniques |
| Authors | N. B. Rodionov, V. N. Amosov, S. A. Meshchaninov, A. F. Palā, V. P. Rodionova |
| Institutions | Troitsk Institute for Innovation and Fusion Research |
| Citations | 2 |
Abstract
Section titled āAbstractāA photovoltaic cell based on a p-i synthetic-diamond structure was investigated. This bilayer structure consists of a substrate, which was grown by the high pressure-high temperature (ŠŠ ŠŠ¢) method at an increased pressure and elevated temperature of highly-boron-doped p-type diamond, and on which a IIŠ°-type film with a thickness of ~50 Ī¼m was deposited using the chemical vapor deposition (CVD) technique. Solid contacts were applied to the substrate, while the contacts that were applied to the CVD film were both solid and semitransparent. The current-voltage characteristics of photovoltaic cells for Ī±, X-ray, and UV radiations for solid and semitransparent contacts were investigated. The obtained experimental data were used to evaluate the upper bound of the energy-conversion efficiency for all these radiations, which amounted to 4.5-14%.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1989 - Radionuklidnye istochniki v radiatsionnoi tekhnike
- 1994 - Proc. NATO Adv. Workshop on Wide Bandgap Mater.