Heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond (SOD)
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-09-20 |
| Journal | Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE |
| Authors | Xiaojun Xie, Anand Ramaswamy, Yang Shen, Zhanyu Yang, Matt Jacob-Mitos |
| Institutions | University of Virginia, Aurrion (United States) |
Abstract
Section titled āAbstractāWe report on InP-based high power modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. Typical dark currents of MUTC photodiodes on SOD waveguides are 20 nA at - 5 V bias voltage. A 50-μm long photodiode has an internal responsivity of 1.07 A/W at 1550 nm wavelength. The bandwidths of photodiodes with active areas of 14×25 μm<sup>2</sup>, 14×50 μm<sup>2</sup>, 14×100 μm<sup>2</sup> and 14×150 μm<sup>2</sup> are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of 14×100 μm<sup>2</sup> photodiodes are 13 dBm, 14.4 dBm and 15.3 dBm at 10 GHz, respectively. The maximum DC dissipated power is 0.67 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated on SOD waveguides.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - High-gain, low-noise-figure, and high-linearity analog photonic link based on a high-performance photodetector