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6CCVD Research

TERS at work - 2D materials, from graphene to 2D semiconductors

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2016-09-15
JournalProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
AuthorsAndrey Krayev, Sergey Bashkirov, Vasily Gavrilyuk, Vladimir V. Zhizhimontov, Marc Chaigneau
InstitutionsHoriba (France)
Citations1

Abstract

Section titled ā€œAbstractā€

We report results of TERS characterization of graphene oxide and the 2D semiconductors, MoS2 and WS2. The gap mode TERS signal of these 2D materials becomes dramatically enhanced over wrinkles and creases, as well as over nanopatterns imprinted into flakes using a sharp diamond probe. The resonant Raman signal of MoS2 contains additional peaks normally forbidden by selection rules. TERS maps of few-layer-flakes of this 2D semiconductor show that the spatial distribution of Raman intensity across the flake varies for different peaks, providing interesting insights into the structure of such 2D semiconductors with 10-20 nm spatial resolution.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2015 - Raman characterization of defects and dopants in graphene
  2. 2014 - Excited Excitonic States in 1L, 2L, 3L,and Bulk WSe2 Observed by Resonant Raman Spectroscopy
  3. 2011 - Nanoscale Chemical Imaging of Single-Layer Graphene
  4. 2013 - Visualizing Graphene Edges Using Tip-Enhanced Raman Spectroscopy

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