Nanocrystalline Diamond Integration with III-Nitride HEMTs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-10-13 |
| Journal | ECS Journal of Solid State Science and Technology |
| Authors | Travis J. Anderson, Karl D. Hobart, Marko J. Tadjer, Andrew D. Koehler, Eugene A. Imhoff |
| Institutions | United States Naval Research Laboratory |
| Citations | 49 |
Abstract
Section titled āAbstractāReduced performance in Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. To mitigate this effect, the incorporation of high thermal conductivity diamond heat spreading films or substrates has been proposed. A mid-process integration scheme, termed āgate-after-diamond,ā is shown to improve the thermal budget for NCD deposition and enables scalable, large-area diamond coating without degrading the Schottky gate metal. The optimization of this process step is presented in this work. Nanocrystalline (NCD)-capped devices had a 20% lower channel temperature at equivalent power dissipation. Improved electrical characteristics were also observed, notably improved on-resistance and breakdown voltage, and reduced gate leakage.