Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-10-13 |
| Journal | Physical review. B./Physical review. B |
| Authors | T. Yamaguchi, Yosuke Sasama, Masashi Tanaka, Hiroyuki Takeya, Yoshihiko Takano |
| Institutions | Waseda University, National Institute for Materials Science |
| Citations | 12 |
Abstract
Section titled āAbstractāWe report magnetoresistance measurements of hydrogen-terminated\n(100)-oriented diamond surfaces where hole carriers are accumulated using an\nionic-liquid-gated field-effect-transistor technique. Unexpectedly, the\nobserved magnetoresistance is positive within the range of 2<T<10 K and -7<B<7\nT, in striking contrast to the negative magnetoresistance previously detected\nfor similar devices with (111)-oriented diamond surfaces. Furthermore we find:\n1) magnetoresistance is orders of magnitude larger than that of the classical\norbital magnetoresistance; 2) magnetoresistance is nearly independent of the\ndirection of the applied magnetic field; 3) for the in-plane field, the\nmagnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universal\nfunction of B/T. These results indicate that the spin degree of freedom of hole\ncarriers plays an important role in the surface conductivity of\nhydrogen-terminated (100) diamond.\n