Amorphous carbon buffer layers for separating free gallium nitride films
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-11-01 |
| Journal | Technical Physics Letters |
| Authors | A. S. Altakhov, R. I. Gorbunov, L. A. Kasharina, F. E. Latyshev, V. A. Tarala |
| Institutions | Ioffe Institute, North-Caucasus Federal University |
| Citations | 4 |
Abstract
Section titled āAbstractāThe possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrates with a (0001) crystallographic orientation. The samples have been studied by the methods of Raman scattering and X-ray diffraction analysis. It is shown that thin DLC films affect only slightly the processes of nucleation and growth of gallium nitride films. Notably, the strength of the āGaN film-Al2O3ā substrate interface decreases, which facilitates separation of the GaN layers.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - Cand. Sci. (Phys. Math.) Dissertation