Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2016-11-28 |
| Journal | Applied Physics Letters |
| Authors | Maneesh Chandran, Shaul Michaelson, CĂ©cile Saguy, A. Hoffman |
| Institutions | Technion â Israel Institute of Technology |
| Citations | 18 |
Abstract
Section titled âAbstractâIn this letter, we report on the proof of a concept of an innovative delta doping technique to fabricate an ensemble of nitrogen vacancy centers at shallow depths in (100) diamond. A nitrogen delta doped layer with a concentration of âŒ1.8 Ă 1020 cmâ3 and a thickness of a few nanometers was produced using this method. Nitrogen delta doping was realized by producing a stable nitrogen terminated (N-terminated) diamond surface using the RF nitridation process and subsequently depositing a thin layer of diamond on the N-terminated diamond surface. The concentration of nitrogen on the N-terminated diamond surface and its stability upon exposure to chemical vapor deposition conditions are determined by x-ray photoelectron spectroscopy analysis. The SIMS profile exhibits a positive concentration gradient of 1.9 nm/decade and a negative gradient of 4.2 nm/decade. The proposed method offers a finer control on the thickness of the delta doped layer than the currently used ion implantation and delta doping techniques.