Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-01-01 |
| Journal | Journal of the Vacuum Society of Japan |
| Authors | Naoteru Shigekawa |
| Institutions | Osaka City University |
Abstract
Section titled āAbstractāResearch activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed.The structural and electrical properties of interfaces fabricated using the SAB technologies are examined.The change in the interface characteristics due to annealing after bonding is highlighted.The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.