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Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

MetadataDetails
Publication Date2017-03-23
JournalJapanese Journal of Applied Physics
AuthorsHayate Yamano, Sora Kawai, Kanami Kato, Taisuke Kageura, Masafumi Inaba
InstitutionsGunma University, Waseda University
Citations63

We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NVāˆ’) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NVāˆ’ was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NVāˆ’ state of very shallow NV centers (∼2.6 ± 1.1 nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.